Comparative analysis of GaN FET power system for maximizing system benefit

Abstract

This paper carries out a series of the analysis of the power system using gallium nitride (GaN) FET which has a wide band gap (WBG) characteristics comparing to the conventional silicon (Si) MOSFET-used power system. At first, for the comparison of each semiconductor device, the switching-transient parameter is quantitatively extracted from the released information of GaN FET. And GaN FET model which reflect this dynamic property is configured. By using this model, the performance of GaN FET is analyzed comparing to Si MOSFET. As a result, GaN FET power system, designed by the optimal point suggested in this paper, can reduce the loss by 25.5% and the volume by 78.6% of major components comparing conventional Si MOSFET power system.