Abstract
The motivation of this paper is to bring into notice the establishment of two topologies: enhanced boost-quasi Z source inverter (EB-QZSI) and enhanced boost QZSI with an active switched network (EB/ASN-QZSI) which have poor performance than Extended switched capacitor quasi switched boost inverter (ESC-qSBI). However, ESC-qSBI has been developed before the EB-QZSI and EB/ASN-QZSI. The ESC-qSBI utilizes lesser number of inductors than the enhanced boost-quasi Z source inverter (EB-QZSI) and enhanced boost QZSI with an active switched network (EB/ASN-QZSI). In the presence of parasitics, ESC-qSBI has higher voltage gain than the EB-QZSI and EB/ASN-QZSI. Additionally, EB/ASC-QZSI has lower total voltage stress across diodes and capacitors as compared to EB-QZSI and EB/ASN-QZSI. The operation, steady state analysis, comparison and experimental analysis are discussed to prove the superorrity of ESC-qSBI over EB-QZSI and EB/ASN-QZSI.
Highlights
Voltage source inverters (VSI) are the heart of industrial drives [1], household inverters and hybrid electric vehicles
For non-ideal case due to lower number of inductors, the voltage gain is always higher than EB/ASN-AZSI and enhanced boost-quasi Z source inverter (EB-quasi Z-source inverter (QZSI))
Since the practical voltage gain remains higher than EB-Z-source inverter (ZSI) and EB/ASN-QZSI, the voltage stress across the inverter switches is lower in ESC-qSBI
Summary
Voltage source inverters (VSI) are the heart of industrial drives [1], household inverters and hybrid electric vehicles. The simplified copper loss in inductor for the proposed inverter is given as PLc. where P0 is the output power, G is total voltage gain, Z is the impedance of the load and is power factor angle. Substituting the values of the currents from Equ-(24), and taking all the capacitors resistance equal i.e. rC1= rC2= rC3 = rC , the total power loss in the capacitor is given as PC [a + b + c + d]. DIODES LOSS The diodes losses are categorized in three parts: loss due to forward voltage drop, due to internal resistance and reverse recovery loss These are dependent on the average current, RMS current and voltage stress, respectively. Substituting the values of average currents, the power loss due to forward voltage drop is given as PDVF. The conduction power loss in the diodes is given as PDCond [r
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