Comparative Analysis of Different Figures of Merit for AlGaN/GaN and Si Surrounding-Gate Field Effect Transistors (SG-FETs)

Yogesh Kumar Verma,Varun Mishra,Manoj Singh Adhikari,Dharam Buddhi,Santosh Kumar Gupta

doi:10.1007/s12633-021-01099-z

Abstract

The combination of better transport properties of III-V group semiconductors along with excellent electrostatic control of surrounding gate is a promising option for the future low power electronics. Accordingly in this brief, the major figures of merit (FOM) including output current, output conductance (gd), transconductance generation factor (TGF), intrinsic gain (dB), and dynamic power dissipation are computed for surrounding-gate field effect transistors (SG-FETs) considering III-V group semiconductors and Si channel material respectively with respect to different device parameters. It is noticed that the center potential is higher in AlGaN/GaN SG-FET than Si for different values of channel length (CL), channel height (H), oxide thickness (tox), and doping concentration (Nd). The AlGaN/GaN SG-FET provides lower gd than Si for different values of CL, H, tox, and Nd as required for MOS analog circuits to achieve higher gain. The peak value of TGF and intrinsic gain is higher in AlGaN/GaN than Si SG-FET for different values of CL, H, tox, and Nd. In this work, we have analyzed the MOSFET structure for normally off operation of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce dynamic power dissipation (PD). The magnitude of PD is calculated to be lower in normally off AlGaN/GaN SG-FET than Si for different values of CL, H, and tox.

Highlights

Since the invention of IC technology, there has been quest for integrating more and more functionalities on a single IC which led to miniaturization of the transistors [1]
The major figures of merit (FOM) including output current, output conductance, transconductance generation factor (TGF), intrinsic gain, and dynamic power dissipation are computed for different device parameters
It has been noticed that the intrinsic gain and TGF enhances with increment in channel length

Summary

Introduction

Since the invention of IC technology, there has been quest for integrating more and more functionalities on a single IC which led to miniaturization of the transistors [1]. The major problem associated with the conventional Si Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) is the parasitic capacitance and the corresponding resistance that enhances as device dimensions reduce [2]. The III-V channel material based multi-gate field effect transistor represents the recent committing technology for very high power, high temperature, high frequency, and high linear conditions [8] [9] [10]. The international technology roadmap for semiconductors (ITRS) roadmap depicts the fact that for sub 100 nm device sizes the multiple gate MOSFETs are to be used due to reduced SCEs [12] [13]. S. Takatani et al [15] reported that the III-V channel material field effect transistors have significant potential for the realization of antenna switches in microwave communication systems due to their low on resistance (RON)

Structure Description

Results And Discussions

Conclusion