Abstract

Dimension of piezoresistor and diaphragm, placement of piezoresistors and shape of diaphragm are the factors that enhance the sensitivity of a sensor. Different shapes of diaphragms are compared and analyzed the results using analytical equations. Most normally utilized materials are silicon, silicon dioxide and polysilicon for the piezoresistors and for the diaphragms. Single crystal silicon is used for both piezoresistor and diaphragm. The proposed pressure sensor is analyzed by considering different parameters such as maximum centre deflection of the diaphragm, output voltage across the bridge, and sensitivity of the sensor. Comsol Multiphysics is employed for the simulation of proposed sensor.

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