Abstract
This paper presents a comparison analysis of carrier statistics on numerical simulations of MOSFET and tunneling FET (TFET). While the MOSFET current characteristics are not sensitive to the carrier statistic utilized in the simulation, a detailed analysis is presented by inspections of the channel charge density and electric field profile. On the other hand, numerical simulations of TFETs with the Fermi–Dirac (F-D) statistics give larger current even in the sub-threshold region. It is attributed to the larger electric field across the tunnel junction between degenerated channel and heavily doped source which governs the interband tunneling process. As a result, F-D statistics should be utilized when modeling the tunneling current in TFETs.
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