Abstract
The process of grain boundary (GB) diffusion through thin evaporated and ion-plated Ag and AgSn films of 500 nm thickness was studied in the temperature range of about 150–250°C. Two methods were independently used for determination of the GB diffusion parameters: the so-called first appearance method and the simplified accumulation method. The values of activation energies and diffusivities have been determined from the Arrhenius plots. The change of activation energy and diffusivity with Sn concentration was explained by possible changes of thermodynamical properties of the samples occurring during GB diffusion.
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