Abstract
Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices. This work presents a compact formulation of the Schenk TAT model that is used to fit experimental drain-source current (Ids) versus gate-source voltage (Vgs) data of an L-shaped and line tunneling type TFET. The Schenk model incorporates material-dependent fundamental physical constants that play an important role in influencing the TAT generation (GTAT) including the lattice relaxation energy, Huang–Rhys factor, and the electro-optical frequency. This makes fitting any experimental data using the Schenk model physically relevant. The compact formulation of the Schenk TAT model involved solving the potential profile in the TFET and using that potential profile to calculate GTAT using the standard Schenk model. The GTAT was then approximated by the Gaussian distribution function for compact implementation. The model was compared against technology computer-aided design (TCAD) results and was found in reasonable agreement. The model was also used to fit an experimental device’s Ids–Vgs characteristics. The results, while not exactly fitting the experimental data, follow the general experimental Ids–Vgs trend reasonably well; the subthreshold slope was loosely similar to the experimental device. Additionally, the ON-current, especially to make a high drain-source bias model accurate, can be further improved by including effects such as electrostatic degradation and series resistance.
Highlights
With conventional complementary metal-oxide-semiconductor (CMOS) technology coming to the end of its life cycle owing to scaling limitations, there has been significant interest in the research and development of alternate technologies including tunneling field-effect-transistors (TFET) [1,2,3]
TFETs work on the principle of band-to-band-tunneling, and provide a significantly better subthreshold slope (SS) as compared to metal-oxide-semiconductor field-effect-transistor (MOSFET) devices, and its ON-current (ION ) issue [4] can be augmented with the help of alternate designs, including the line tunneling type TFET or III–V material TFET
The third part includes the compact implementation of the Schenk model where the TAT tunneling rate is expressed as a Gaussian distribution
Summary
With conventional complementary metal-oxide-semiconductor (CMOS) technology coming to the end of its life cycle owing to scaling limitations, there has been significant interest in the research and development of alternate technologies including tunneling field-effect-transistors (TFET) [1,2,3]. TFETs work on the principle of band-to-band-tunneling, and provide a significantly better subthreshold slope (SS) as compared to metal-oxide-semiconductor field-effect-transistor (MOSFET) devices, and its ON-current (ION ) issue [4] can be augmented with the help of alternate designs, including the line tunneling type TFET or III–V material TFET. In theory, this makes the TFET an ideal candidate to replace the aging MOSFET.
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