Abstract

We demonstrate a compact equivalent circuit model for transmission-line representation of monocrystalline silicon solar cell. The model is suitable for solar cell characterization in terms of impedance/admittance spectroscopy. Number of coordinate partition elements necessary to adequately represent the device characteristics is reasonably comparable with the number of solar cell structure epi-layers. This makes the model convenient for transient effect simulations in external electrical circuits where fully distributed transmission-line model is too complex for direct time-domain calculations.

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