Abstract
A novel design of polarization rotator (PR) based on Silicon on insulator (SOI) is proposed and analyzed using full vectorial finite element method and finite element beam propagation method. The asymmetric etching of the silicon nanowire with specific values allows the polarization rotation between transverse electric (TE) and transverse magnetic (TM) modes. The proposed SOI PR has a compact device length of 6.45 fim with small insertion losses of 2.2 dB. Further, the suggested design is easy for fabrication with CMOS compatibility.
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