Abstract
In this work, we report two slow-light enhanced silicon optical modulators with electro-optic (EO) phase shifter lengths of 500 μm and 150 μm that were fabricated using the AIM Photonics foundry. Tunable power splitters give a threefold increase in the extinction ratio (ER). An eye diagram operating at 10 Gbps was achieved using a very low signal voltage of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">pp</sub> = 500mV. The energy per bit is 57.5 fJ/bit and 45 fJ/bit for the 500 μm and 150 μm modulators, respectively. The nonlinearity of the devices were measured yielding spur-free dynamic range of 113.2 dB/Hz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2/3</sup> . The 150 μm length MZM is among the smallest optical modulators using Bragg gratings for slow light ever reported and results in an estimated modulation efficiency of 0.33 V·cm.
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