Abstract

In this paper, an all-optical quantization scheme using the nonlinear Kerr effect in silicon-based ring resonators is proposed. In this structure, silicon nanocrystals embedded in silica (Si-nc/SiO2) are used as the Kerr materials because of their high nonlinear coefficient at the wavelength of 1550 nm and complementary metal–oxide–semiconductor (CMOS) fabrication compatibility. Simulation results obtained by the three-dimensional finite difference time domain (FDTD) method show seven quantization levels corresponding to the range of 0 to 75 W/mm2 of the optical input power. This is the maximum number of quantization levels in similar recent structures to the best of our knowledge, while the total footprint is reduced to 300 μm2.

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