Abstract

This theoretical simulation paper presents designs and projected performance of ∼1550-nm silicon-on-insulator (SOI) and ∼2000-nm Ge-on-Si-on-nitride and Ge-on-nitride 2×2 optical crossbar switches based upon a three-waveguide coupler in which the central waveguide is a nanobeam actuated by the thermo-optical (TO) effect. A TO heater stripe is located atop the central nanobeam. To implement accurate and realistic designs, the 3D finite difference time domain approach was employed. The metrics of crossbar switching, insertion loss (IL) and crosstalk (CT) were evaluated for choices of 3-waveguide structure parameters and TO-induced index changes. The predicted ILs and CTs were excellent, enabling the designed devices to be considered as fundamental building blocks in wavelength-division-multiplexed cross-connect (WXC) applications. Proposed here are compact, nonblocking space-and-wavelength routing switches to be constructed in a monolithic, industry-standard SOI chip (and in Ge-on-SON and GON chips). Specifics are given for realizing 16 × 16 × Mλ WXCs as well as reconfigurable, multi-resonant, programmable hexagonal and diamond meshes.

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