Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

Abstract

A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2 μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30dB and the excess loss is 0.2-2.6dB for TE polarization while the ER is 20-27dB and the excess loss is 0.3-2.8dB for TM polarization when operating in the wavelength range of 1520-1580nm.