Abstract
In the second part of this series, we propose a physics-based model for describing the temperature dependence of TiO x -based memristors, both switching and static. We show that the current–voltage ( ${I}$ – ${V}$ ) characteristics of memristor in the nonswitching regime, indicating a Schottky emission mechanism, can be described by minor modifications to the Schottky current equation. This leads to a physics-based static ${I}$ – ${V}$ compact model. Simultaneously, we show that the temperature dependence of the switching dynamics model parameters naturally emerges as a mere scaling factor from the static ${I}$ – ${V}$ model. This is a computationally efficient approach, which does not require any additional parameters to extend the switching dynamics model for incorporating thermal dependence.
Highlights
T iOx has been shown to be one of the most promising oxide materials for memristive devices [1]–[7]. It is a CMOS-compatible material that can be used to realize high-density arrays of memristor devices [8], [9]. In this part of the series, we focus on TiOx memristors that have been shown to exhibit the Schottky emission [5], [10] as the dominant conduction mechanism in the low-field regime
We further show that the proposed physics-based model can be applied to another type of TiOx memristor device
This work on physics-based model helps to explain this behavior that is rooted in the Schottky emission as the conduction mechanism, which holds at the low voltages typically applied when reading the device
Summary
T iOx has been shown to be one of the most promising oxide materials for memristive devices [1]–[7] It is a CMOS-compatible material that can be used to realize high-density arrays of memristor devices [8], [9]. In this part of the series, we focus on TiOx memristors that have been shown to exhibit the Schottky emission [5], [10] as the dominant conduction mechanism in the low-field regime.
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