Abstract
The analytic potential model for symmetric double gate MOSFETs is verified and calibrated with experimental nand p-channel FinFET data over a wide range of gate lengths and bias regions. Quantum mechanical effects are incorporated in the model to reproduce the measured C-V characteristics. The long-channel mobility consists of both a phonon scattering term and a Coulomb scattering term with opposite field dependence. There is a slight mobility dependence on gate length due to the different strain effects in n-and p-channel FinFETs. The 2-D short-channel model has been validated in terms of the measured drain-induced barrier lowering (DIBL), threshold voltage rolloff, and subthreshold current slope of sub-100-nm nand p-channel FinFETs.
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