Abstract
In this work, a compact model for short-channel effects is proposed for fully depleted silicon-on-insulator (FDSOI) MOSFETs, which takes into account the impact of body-bias and fringing fields, developed to be suitable for both thin and thick buried oxide (BOX) devices. The model is derived using the Voltage-Doping Transform, confirmed with TCAD simulations and experimental data from the literature. The impact of the BOX thickness on the subthreshold swing and the contribution of the leakiest path position to the DIBL are finally discussed.
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