Abstract
The emergence and growing maturity of spintronics present new ideas and methods for low-power integrated circuit design. Spin-transfer torque magnetic tunnel junction (STT-MTJ) device is one of the spintronic candidates for future promising non-volatile memory. In this paper, a compact model for the STT-MTJ device in nanoscale is presented. By analyzing the influence of the device scale on its properties, the scale effect of the MTJ device is included. The thermal stability factor is trimmed to reflect the error rate of the scale effect of the device. Based on the compact model, the simulation is conducted with different device sizes to present the influence of the scale effect on the device characteristics, including the resistance, the critical current, the switching time, the write error rate, and other characteristics.
Highlights
The continuous shrinkage of Complementary Metal Oxide Semiconductor (CMOS) process nodes leads to high static power consumption in memory due to the exacerbated leakage currents
The perpendicular magnetic anisotropy (PMA) MTJ device shows more promising than the in-plane ones because of its lower write critical current density, higher thermal stability and lager memory density
We presented a compact model of nanometer spin transfer torque magnetic tunnel junction (STT-MTJ) device with scale effect
Summary
The continuous shrinkage of Complementary Metal Oxide Semiconductor (CMOS) process nodes leads to high static power consumption in memory due to the exacerbated leakage currents. The emergence and growing maturity of the spintronics presents new ideas and opportunities for overcoming the issue. The continuous shrinkage of Complementary Metal Oxide Semiconductor (CMOS) process nodes leads to high static power consumption in memory due to the exacerbated leakage currents.. Spin transfer torque magnetic tunnel junction (STT-MTJ) is a new type of spintronic device with many merits, such as nonvolatile in power-off state, unlimited write times, low static power, and low leakage current, etc., which is becoming one of the most promising candidates for future nonvolatile memory devices. The perpendicular magnetic anisotropy (PMA) MTJ device shows more promising than the in-plane ones because of its lower write critical current density, higher thermal stability and lager memory density.. We presented a compact model of nanometer STT-MTJ device with scale effect.
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