Abstract
A physically based compact model of amorphous indium gallium zinc oxide thin-film transistors, suitable for CAD simulators, is proposed. It is based on a particularly simple form of the charge-sheet model: the symmetric quadrature of the accumulation charge. The model accounts for both trapped and free charges by means of multiple-trapping-and-release and percolation in the conduction band. The model is simple, symmetric, accurately accounts for the below-threshold, linear, and saturation regimes via a unique formulation. Finally, it leads to simple and accurate expressions of the quasi-static terminal charges based on the Ward–Dutton partition.
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