Abstract
A 2-D closed form, analytical compact model for long- and short-channel junctionless accumulation mode double gate MOSFETs is presented. The physics-based 2-D model for the potential is derived with the help of Poisson's equation and the conformal mapping technique by Schwarz-Christoffel. From this closed-form solution, we derive simple equations for the calculation of the threshold voltage VT and subthreshold slope S. Using Lambert's W-function and a smoothing function for the transition between the depletion and accumulation regions, a unified charge model valid for all operating regimes is developed. Dependencies between the physical device parameters and their impact on the device performance are worked out. A comparison of our 2-D physics-based compact model is done versus 2-D technology computer-aided design (TCAD) Sentaurus simulation data.
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