Abstract
The main results of the development of compact laser diode mini-arrays operating under 875-nm pulsed pumping are presented and the instrumental characteristics of these arrays are studied. Specific features of these sources, in addition to a high output power (∼1.5 kW), are a narrow directional pattern (angular divergence 21° × 8°) and a small emitting area (less than 1 mm2). The use of serially integrated AlGaAs/GaAs MOCVD heterostructures with three emitting regions to develop laser diode arrays allowed us to improve their working parameters.
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