Abstract
Advanced silicon impact-ionization models are linked with simple accurate 1-D breakdown-voltage formulas for p-n step junctions. The models are useful for ab initio calculations and improve the accuracy of older models due to a new parameterization based on a numerical simulation. New parameters for effective impact-ionization coefficients are presented for Chynoweth and Fulop formulations. The parameter sets are based on impact-ionization models of Van Overstraeten and De Man and of the Universita di Bologna, including its recent updates. They allow quick computing of silicon p-n junction breakdown voltages from 10 V to 10 kV with maximum deviation from numerical data of ±5%. The new breakdown-voltage models account for the junction temperature and the depletion on both sides of the p-n junction.
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