Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory

Evelyn T Breyer,Stefan Slesazeck,Thomas Mikolajick,Halid Mulaosmanovic,Martin Trentzsch,Sven Beyer,Thomas Melde,Stefan Dunkel,Jens Trommer

doi:10.1109/jeds.2020.2987084

Evelyn T Breyer, Stefan Slesazeck + Show 7 more

Open Access

https://doi.org/10.1109/jeds.2020.2987084

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Abstract

Due to their CMOS compatibility, hafnium oxide based ferroelectric field-effect transistors (FeFET) gained remarkable attention recently, not only in the context of nonvolatile memory applications but also for being an auspicious candidate for novel combined memory and logic applications. In addition to bringing nonvolatility into existing logic circuits (Memory-in-Logic), FeFETs promise to guide the way to compact Logic-in-Memory solutions, where logic computations are examined in memory arrays or array-like structures. To increase the area-efficiency of such circuits, a dense integration of FeFETs and standard FETs is essential. In this paper, we show that the ultra-dense co-integration of FeFETs and nFETs (28nm HKMG) with shared active area does not alter the FeFET’s switching behavior, nor does it affect the baseline CMOS. Based on this, we propose the integration of a FeFET-based, 2-input look-up table (memory) directly into a 4-to-1 multiplexer (logic), which is utilized directly in a 2TNOR memory array or stand-alone circuit. The latter one dramatically reduces the transistor count by at least 33% compared to similar FeFET-based circuits. By storing values of the look-up table in a nonvolatile manner, no energy is consumed during standby mode, which enables normally-off computing. To take another step towards novel Logic-in-Memory designs, we experimentally demonstrate a very compact in-array 2T half adder and simulate an array-like 14T full adder, which exploit the advantages of the array arrangement: easy write procedure and a very compact, robust design. The proposed circuits exhibit energy-efficiency in the (sub)fJ-range and operation speeds of 1GHz.

Highlights

As the amount of data to be processed is constantly increasing, the way of storing these data, and their processing time and the associated power consumption become critically important for efficient computing
Hafnium oxide based field-effect transistors (FeFET) were proven compatible with standard CMOS processing [9]
Different from [5], where the FeFET is integrated into an existing logic fulladder, the write operation of FeFET in the memory array is more straightforward, as known memory array write schemes can be used

Summary

INTRODUCTION

As the amount of data to be processed is constantly increasing, the way of storing these data, and their processing time and the associated power consumption become critically important for efficient computing This is aggravated by the physical separation of memory and logic units in today’s computer architectures, resulting in the necessity for temporary storage solutions. Different from [5], where the FeFET is integrated into an existing logic fulladder, the write operation of FeFET in the memory array is more straightforward, as known memory array write schemes can be used These circuits can be utilized for computations directly within arrays as well as array-like stand-alone applications. Transient logic measurements and SPICE simulations prove the functionality of the proposed concepts

DEVICE STRUCTURE AND METHODS

Findings

CONCLUSION