Abstract
This paper presents a new large signal compact electro-thermal model of the OMMICtrade InP heterojunction bipolar transistor (HBT) based on the UCSD (University of California, San Diego) HBT model and the local reference concept for a multi-physics circuit simulator fREEDAtrade. Simulations using this HBT model coupled with other thermal elements show dynamically how electrical behaviour is influenced by temperature variation of the active device from iterative calculations, while other circuit simulators can only show the electrical performance at fixed temperature. Implementation of the HBT thermal model including both the intrinsic and extrinsic properties as a 6-port element in fREEDAtrade is described, and illustrative simulation results in both fREEDAtrade and ADStrade are presented
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