Abstract
A novel electromagnetic band-gap (EBG) structure with a compact size and multi-band-gaps is proposed. The proposed EBG (denoted as DAU-EBG) is formed by etching dual U-shaped slots symmetrically with respect to one axis of the edge-located vias mushroom-type EBG (ELV-EBG). As the surface current paths of the DAU-EBG are prolonged by the etched U slots, the size of our proposed DAU-EBG is only 25.9% of the conventional mushroom-type EBG (CMT-EBG) and 37.3% of the ELV-EBG. Due to the asymmetry introduced by the dual U slots, different band-gap properties in X- and Y-directions are obtained. Three band-gaps and two band-gaps are achieved in X- and Y-directions, respectively. The working mechanism of the proposed EBG and some parameter study are also given. This DAU-EBG can find its use in future compact multi-band rejection applications.
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