Compact Design Models of Cryo and Room Temperature Si MOS, GaN, InGaAs, and p-diamond HEMT TeraFETs

Abstract

The plasmonic field effect transistors structures (TeraFETs) with the varying width allow for modulation of the electron drift velocity while keeping the plasma velocity constant. The constant plasma velocity and variable electron drift velocity lead to the resonant excitation of the unstable plasma modes in the repeated sections of the varying width resulting in a strong enhancement of the plasmonic instability. This instability involves the oscillating dipole charge carried by the plasma waves. The plasmons can efficiently couple to the terahertz (THz) electromagnetic radiation due to the periodic geometry of the gated structure. Our modeling shows that such THz devices could be implemented at room temperature and at 77 K using 22 nm and 65 nm Si MOS technology. At cryogenic temperatures, plasmonic structures fabricated using standard Si MOS technology should exhibit superior performance in a wide frequency range (from 300 GHz to a few THz). A still better performance at room temperature could be achieved using 22 nm and 65 nm GaN and 22 nm, 65 nm, and even 130 nm p-diamond TeraFETs.