Abstract
Analytical expressions for terminal charges of an independent-gate asymmetric double gate MOSFET (DGFET) are derived. The new charge model is <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">∞</sub> continuous, valid for all bias conditions and does not involve charge-sheet approximation. This is accomplished by developing the symmetric linearization method in the form that does not require identical boundary conditions at the two Si-SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interfaces and allows for the volume inversion in the DGFET channel. Verification of the model is performed with both numerical computations and 2D TCAD simulations under a wide range of biasing conditions. The terminal charges expressions are similar to those in the PSP bulk MOSFET model and in the PSP-based common-gate symmetric DGFET model. The latter becomes a special case of the new model.
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