Compact channel potential analytical modeling of DG-TFET based on Evanescent-mode approach

Abstract

In this paper, we propose analytical modeling of double gate (DG) tunnel field effect transistor (TFET) which is derived by using Evanescent-mode analysis approach. This approach considers the channel potential as the sum of a long channel potential and a short channel perturbation along with the whole structure rather than just the $$\hbox {Si}/\hbox {SiO}_{2}$$Si/SiO2 interface or the channel centre. Due to this, the characteristic length lambda $$(\lambda )$$(?) does not depend on the transverse position within the channel. Analytical potential modeling of DG-TFET along with evaluation of electric field and drain current has been carried out. It has also been shown in the results that the proposed model has better channel potential and tunnel current than single-gate SOI TFET.