Abstract
In this paper, compact channel noise models valid in all regions of operation for deep-submicron MOSFETs have been developed and experimentally verified. The physics-based expressions for thermal noise and flicker noise and corner frequency constitute compact channel noise models. The carrier heating, channel-length modulation, and mobility degradation due to the lateral electric field have been incorporated in the models. The effect of the mobility and carrier number fluctuations on the flicker noise, as well as the dependence of the mobility limited by Coulomb scattering on the inversion carrier density, have been considered in the flicker noise model. The measurement results validate the proposed models.
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