Abstract
For the first time, we demonstrated a compact Erbium-doped fiber amplifier (EDFA) using a newly developed Hafnia Bismuth Erbium co-doped fiber (HBEDF) as a gain medium. The HBEDF was fabricated using a modified chemical vapor deposition process in conjunction with solution doping technique. The fiber has high doping levels of Erbium ion of 12,500 wt ppm through incorporation of Hafnium and Bismuth ions, which prevents the clustering effect. At the input signal power of −10 dBm, a flat gain of 10.9 dB is obtained from the wavelength region of 1525 to 1565 nm with a gain variation of less than ± 0.5 dB. The noise figure is maintained below 4.4 dB at the flat-gain region. The proposed amplifier has the potential applications in dense wavelength division multiplexing communication system due to its simplicity and compact design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
