Abstract
In this work, we depart from the cell-based percolation model of gate dielectric breakdown (BD) to propose analytical models for the SET and RESET statistics in resistive switching memory (RRAM). The SET or RESET statistics model consists of two basic elements: (i) a cell-based geometrical model to describe the dependence of the resistive switching (RS) distribution on the defect generation in the conductive filament (CF), and (ii) a deterministic model for the SET/RESET dynamics to describe the relation of the defect generation with measurable variables such as the SET/RESET voltage and current. The experimental observations in HfO2- and NiO-based RRAM devices can be successfully accounted for by our models for RS statistics. The models set a framework for the consideration of performance-reliability tradeoffs in RRAM.
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