Abstract
–Amorphous europium-doped tin oxide (a-SnEuO) thin film transistors (TFTs) with a wide bandgap of 3.87 eV were prepared by sol-gel method. The results indicate that as Eu content increases, the off-state current of the a-SnEuO TFTs decreases, the threshold voltage (Vth) shifts in the positive direction and the subthreshold swing (S.S.) is also improved. When Eu content is 30 at%, the mobility of a-SnEuO TFTs is 4.5 cm2V−1 s−1, with an S.S. of 0.8 V dec−1. and a switching ratio of 9.5 × 106. Our study indicates Eu-doped SnO2 TFT is expected to be the next generation of display technology.
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