Communication—Fabrication of Vertical Nanotwinned Copper with (220) Texture by Direct Current Electrodeposition

Abstract

Vertical nanotwinned copper film with (220) texture was fabricated on Si wafer with (111) oriented copper seed layer by direct current electrodeposition. A commercial additive and high current density were applied to control the preferred orientation and formation of nanotwins. The twin boundaries are (111) crystal planes, which are perpendicular to the substrate and parallel to the growth direction. It’s inferred that high cathode potential as a result of high current density can induce (220) texture, which is found to be an essential factor for the formation of vertical nanotwinned copper.