Abstract
Annealing of sprayed pure and Mg doped CuCrO2 thin films by high intensity, short time light irradiation leads to a single delafossite phase at comparatively low temperatures compared with traditional furnace annealing. P-type crystalline undoped and Mg-doped CuCrO2 films were obtained within few minutes by annealing with halogen lamp between 550 °C and 650 °C in Ar atmosphere. Transport properties of Mg-doped thin films were comparable to furnace annealed samples despite much shorter annealing time. The results demonstrate that post-annealing of chemically deposited samples using light irradiation is an effective and fast method for obtaining transparent conducting delafossite thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
