Abstract
A common contact to both n and p Ga-based antimonide materials has been developed for serial wiring of quaternary monolithic interconnected module thermophotovoltaic devices. The contact consists of a multilayer stack of Pd/Ge/Au/Ti/Au. Circular transmission line model measurements yield a specific contact resistance as low as for contacts to n-GaSb and for contacts to p-GaSb without annealing. Further reduction in specific contact resistance can be obtained for contacts annealed in nitrogen ambient for 10 s at 250-300°C. Cell isolation and thermophotovoltaic diodes fabricated using the five-layer metallization for both the p- and n-type contact exhibit current-voltage characteristics equivalent to diodes formed using multilayer metallization for the n-type contact and standard Ti/Au for the p-contact. While annealing improves contact properties, excessive annealing can lead to diffusion of the metallization into the semiconductor and lead to device degradation. © 2002 The Electrochemical Society. All rights reserved.
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