Abstract
A recently developed current gain model, which accounts for high-current effects and can adequately characterize the current gain at high collector current, is improved by including both interfacial and bulk space-charge-region recombination currents, resulting in a comprehensive model that predicts the current gain more accurately at small collector currents. Comparison of the model and measured data for an Al/sub 0.25/Ga/sub 0.75//GaAs/GaAs heterojunction bipolar transistor is included in support of the model. >
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