Common-emitter and common-base small-signal operation of the transistor laser

Abstract

We derive analytic expressions for the transistor laser in the common-emitter and common-base configuration and compare the performance of the transistor in these two modes of operation. We show that the common-base operation results in a wide-band, small-signal modulation response. This effect is due to reduced carrier lifetime in the base. The bandwidth equalization and the suppression of the relaxation oscillation frequency are shown. A bandwidth of 48 GHz is predicted for a vertical cavity laser biased at 10Ith.