Abstract
Interfaces of the ZnSe/GaAs, ZnMgSSe/GaAs, GaAlAs/GaAs, CdS/CdTe and InAs/AlSb heterojunctions which are of much interest in optoelectronics were investigated using the free electron laser internal photoemission (FEL-IPE) technique. This technique is based on photocurrent spectroscopy utilizing the tunability and intense peak power of the FEL operative in the infrared range. It is shown that FEL-IPE makes it possible to measure the band discontinuities of these heterojunctions more precisely and is very effective for evaluating the interfaces of several types of semiconductor heterojunctions.
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