Abstract
The negative fixed charge density contributed by graphene oxide is estimated as high as 6 x 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> . Graphene oxide is therefore a promising candidate for Si solar cell passivation. However, the high-temperature steps for manufacturing commercial Si solar cells would change the composition of graphene oxide. Therefore, graphene oxide cannot be directly adopted by commercial PERC manufacturers with the high-temperature firing step after the rear passivation step. To suppress the high-temperature degradation, we have deposited the graphene oxide on the rear surface of commercial IBC cells directly, and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> , J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</sub> and efficiency of the cell all improved after 100 μL graphene oxide deposition. Graphene oxide can be adopted as the passivation material of commercial cells as long as the high-temperature process on graphene oxide can be suppressed.
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