Comments to “A Distributive-Transconductance Model for Border Traps in III-V/High-k MOS Capacitors”

Abstract

The commentors state that in the article named above [ibid., vol. 34, no. 6, pp. 735-737, Jun. 2013] the authors derived a distributed transconductance gm for the equivalent circuit of oxide traps in an MOS capacitor. Their gm expression, the right-hand side of (7), is mathematically identical to the expression of ΔYbt/Δx, (5), of the commetors' work "A Distributed Bulk-Oxide Trap Model for Al2O3- InGaAs MOS Devices" published in IEEE TRANSACTIONS ON ELECTRON DEVICES in August, 2012. The commentors have found the missing factor in the derivation to the transconductance model in the article commented-on and reaffirmed that, when all the physics are taken into account, the distributed admittance model they published in 2012 is correct.