Abstract
ABSTRACTThe validity of determining the defect density in a-Si:H and its alloys by integrating the sub-bandgap optical absorption coefficient is examined. It is shown that a formula derived for estimating Si-H bond density has been incorrectly applied to defect related absorption. In addition, the complex defect absorption processes have been oversimplified, by assumption, to the case of a single type of transition. Further, in practice, the defect absorption spectrum can not be unambiguously obtained at energies near and above the low end of the optical absorption edge. It is concluded that die integration method for quantitative defect density determination should be viewed at best as an empirical practice with considerable arbitrariness.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
