Abstract
This paper deals with the extraction of parameters and simulation of the postbreakdown leakage current in pMOS devices with ultrathin oxides. The model considered is based on the generalized diode equation, i.e., a diode-like equation with series resistance. The current-voltage (I-V) characteristic can be expressed in a closed-form expression, which makes it is suitable for circuit simulation environments. Model parameters are extracted using the integral difference function (IDF) method. Because the exact expression for the I-V characteristic is used for computing the IDF, the method does not involve any kind of approximation. The effect of including a nonlinear correction term to the voltage drop across the structure is also discussed
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Device and Materials Reliability
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
