Abstract
This paper deals with the extraction of parameters and simulation of the postbreakdown leakage current in pMOS devices with ultrathin oxides. The model considered is based on the generalized diode equation, i.e., a diode-like equation with series resistance. The current-voltage (I-V) characteristic can be expressed in a closed-form expression, which makes it is suitable for circuit simulation environments. Model parameters are extracted using the integral difference function (IDF) method. Because the exact expression for the I-V characteristic is used for computing the IDF, the method does not involve any kind of approximation. The effect of including a nonlinear correction term to the voltage drop across the structure is also discussed
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