Abstract
Starting from the theory of non-radiative multiphonon carrier capture processes at deep traps in semiconductors, a fine numerical fitting of the temperature dependence of the electron capture cross section sigma of the B centre in GaAs has been performed. The effective number of emitted phonons and the associated Huang-Rhys factor are determined to be p=32.7 and S=8.0 respectively. The largely different value suggested for S by Ridley (1978), as well as the discrepancy between the experimental and a theoretical sigma (T) dependence observed by Burt (1979), are attributed to the unwarranted use of Ridley's (low-temperature) formula near room temperature. The drastic influence of their loose choice of an effective phonon energy on Burt's estimation of S from the low-temperature magnitude of sigma is visualised. The higher degree of generality of this analytical tool is demonstrated.
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