Comment on “The effects of Si doping on dislocation movement and tensile stress in GaN films” [J. Appl. Phys. 109, 073509 (2011)

Abstract

In the publication by Moram et al. [J. Appl. Phys. 109, 073509 (2011)], some statements were made which disagree with the measurements presented by the authors of the article. In particular, silicon doping is claimed to suppress dislocation movement in GaN epitaxy hampering stress reduction during growth. We show that the data indeed prove the opposite, in agreement with prior publications.