Comment on “Recombination of excitons bound to oxygen and silicon donors in freestanding GaN”

Abstract

In a recent report, Wysmolek et al. [Phys. Rev. B 66, 245317 (2002)] presented results of a photoluminescence study of donors in GaN. Time-resolved data were used to correlate spectral features associated with recombination processes leaving donors in the ground state and those leaving donors in excited states. The authors quoted donor 1 s-2s and I s-2p transition energies different from values recently reported and impurity state chemical shifts inconsistent with expectation. We recently reported [Freitas et al., Phys. Rev. B 66, 233311 (2002)] a different identification of donor-bound exciton features and an analysis of two-electron satellite features that integrated the effects of excited donor-bound excitons into the analysis. Differences in the two papers are discussed.