Abstract
It is shown in this letter that recently published statements [Solid-State Electron 2004;48(2):335] on negative Schottky barrier height between titanium and n-type Si(001) are not satisfactorily experimentally approved and may not be true. The rectification effect of the Schottky barrier is overshadowed by high series resistance which influences I–V characteristic already in reverse bias and disables to extract true Schottky barrier height from the characteristics in the bias range studied. On the basis of published data it is probably not possible to speak about negative Schottky barrier height.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
