Abstract
Photoemission work by Nakamura et al. [J. Appl. Phys. 101, 043516 (2007)] on the GaAs(111)B(√19×√19)R23° surface shows that the surface region contains three different types of As atoms and two different types of Ga atoms. The outstanding feature of their data is the presence of Ga atoms in the outermost layer of the reconstruction, which they conclude is inconsistent with published models. However, there are two published models, which were not identified in the paper, that contain these top-layer Ga atoms. Additionally, one of the two models also contains three distinct types of As surface atoms and two distinct types of Ga surface atoms as identified experimentally by Nakamura et al. [J. Appl. Phys. 101, 043516 (2007)].
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