Abstract
In our recent article, we stated that Eq. (11) accounts for both the diffusion of interstitials to stacking faults as well as the reaction energy barrier to fault growth. It was pointed out to us by S. M. Hu that the equation that is shown only accounts for the reaction of interstitials at the dislocation loop boundary. By using this equation, we in fact assumed some reaction-limited component of dislocation loop growth. suprem−iv was used to solve the diffusion of interstitials throughout the sample, CI(depth), and in so doing, solved for the interstitial concentration that was used in Eq. (11).
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