Abstract
It is demonstrated that the simplified analysis of Rutherford backscattering\channeling data on damage production in SiC performed by Grimaldi et al. [J. Appl. Phys. 81, 7181 (1997)] cannot be used to calculate the atomic displacement energy. The value of 12 eV at which the authors arrive is much too small. Moreover, their conclusion of similar displacement energies in Si and SiC is essentially wrong. The general reasons for that are discussed and illustrated by an example.
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