Abstract
Adsorption phases of indium on a (111)A InAs surface are investigated. Three phases are detected: (2×2)a, (1×1), and the (0.77×0.77) incommensurate phase. The (0.77×0.77) incommensurate phase is modeled as a densely packed (111) layer of In (fcc) crystal situated in epitaxial relation to the InAs substrate: 〈110〉In∥〈110〉InAs. Reasons for the realization of the fcc crystal structure are analyzed. It is shown that the incommensurate phase is spatially modulated by the periodic potential of the substrate. A comparison of our data on indium adsorption onto (111) InAs with the data in the literature on indium adsorption onto (111) Si, Ge reveals the importance of relaxation of the elastic strains in the formation of two-dimension adsorption-induced superstructures.
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