Abstract
AbstractUltraviolet (UV) photodetectors play an important role in numerous commercial and scientific applications. The UV photodetectors based on binary‐cation indium zinc oxide (InZnO) thin films exhibit great performance enhancement, compared with their single‐cation counterparts. However, UV photodetectors based on 1D InZnO nanowires could potentially exhibit more superior optoelectrical performance, due to the large surface‐to‐volume ratio and favorable carrier transport characteristics of nanowires. This work has combined combustion synthesis with electrospinning technique to efficiently fabricate InZnO nanowire‐based UV photodetectors. At the annealing temperature of 375 °C, the newly designed InZnO nanowire photodetectors exhibit excellent photoelectric performance under the irradiation of 310 nm UV light, including a photo‐to‐dark current ratio of 1.2 × 104, a photo responsivity of 2.8 × 103 A W–1, and a high detectivity of 2.4 × 1016 Jones. This study not only demonstrates the opportunity to construct new‐generation transparent electronics based on 1D metal oxide nanowires but also sheds new light on how to further decrease the annealing temperature of metal oxide nanowire devices for low‐temperature fabrication processes.
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